IPP50R299CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP50R299CP
   Código: 5R299P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.299 Ohm
   Paquete / Cubierta: TO220

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IPP50R299CP Datasheet (PDF)

..1. Size:550K infineon
ipp50r299cp.pdf

IPP50R299CPCIMOSTM #:A0

..2. Size:245K inchange semiconductor
ipp50r299cp.pdf

isc N-Channel MOSFET Transistor IPP50R299CPIIPP50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

7.1. Size:549K infineon
ipp50r250cp.pdf

IPP50R250CPCIMOSTM #:A0

7.2. Size:2146K infineon
ipw50r280ce ipp50r280ce.pdf

IPW50R280CE, IPP50R280CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

7.3. Size:2141K infineon
ipp50r280ce ipw50r280ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R280CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPW50R280CE, IPP50R280CETO-247 TO-2201 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction

7.4. Size:245K inchange semiconductor
ipp50r250cp.pdf

isc N-Channel MOSFET Transistor IPP50R250CPIIPP50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

7.5. Size:244K inchange semiconductor
ipp50r280ce.pdf

isc N-Channel MOSFET Transistor IPP50R280CEIIPP50R280CEFEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

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