All MOSFET. IPP50R299CP Datasheet

 

IPP50R299CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP50R299CP
   Marking Code: 5R299P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
   Package: TO220

 IPP50R299CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP50R299CP Datasheet (PDF)

 ..1. Size:550K  infineon
 ipp50r299cp.pdf

IPP50R299CP IPP50R299CP

IPP50R299CPCIMOSTM #:A0

 ..2. Size:245K  inchange semiconductor
 ipp50r299cp.pdf

IPP50R299CP IPP50R299CP

isc N-Channel MOSFET Transistor IPP50R299CPIIPP50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:549K  infineon
 ipp50r250cp.pdf

IPP50R299CP IPP50R299CP

IPP50R250CPCIMOSTM #:A0

 7.2. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf

IPP50R299CP IPP50R299CP

IPW50R280CE, IPP50R280CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 7.3. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf

IPP50R299CP IPP50R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R280CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPW50R280CE, IPP50R280CETO-247 TO-2201 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction

 7.4. Size:245K  inchange semiconductor
 ipp50r250cp.pdf

IPP50R299CP IPP50R299CP

isc N-Channel MOSFET Transistor IPP50R250CPIIPP50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.5. Size:244K  inchange semiconductor
 ipp50r280ce.pdf

IPP50R299CP IPP50R299CP

isc N-Channel MOSFET Transistor IPP50R280CEIIPP50R280CEFEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SP2107

 

 
Back to Top