IPP50R299CP PDF and Equivalents Search

 ..1. Size:550K  infineon
 ipp50r299cp.pdf

IPP50R299CP C IMOSTM # A0... See More ⇒

 ..2. Size:245K  inchange semiconductor
 ipp50r299cp.pdf

isc N-Channel MOSFET Transistor IPP50R299CP IIPP50R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 7.1. Size:549K  infineon
 ipp50r250cp.pdf

IPP50R250CP C IMOSTM # A0... See More ⇒

 7.2. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf

IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co... See More ⇒

 7.3. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction... See More ⇒

 7.4. Size:245K  inchange semiconductor
 ipp50r250cp.pdf

isc N-Channel MOSFET Transistor IPP50R250CP IIPP50R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 7.5. Size:244K  inchange semiconductor
 ipp50r280ce.pdf

isc N-Channel MOSFET Transistor IPP50R280CE IIPP50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S... See More ⇒