IPP60R520E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP60R520E6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO220

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IPP60R520E6 Datasheet (PDF)

..1. Size:1261K infineon
ipp60r520e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principlea

..2. Size:1048K infineon
ipp60r520e6 ipa60r520e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principleand p

..3. Size:244K inchange semiconductor
ipp60r520e6.pdf

isc N-Channel MOSFET Transistor IPP60R520E6IIPP60R520E6FEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

5.1. Size:917K infineon
ipp60r520c6 2.0.pdf

MOSFET+ =L9D - PA

5.2. Size:552K infineon
ipp60r520cp.pdf

IPP60R520CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220

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ipp60r520cp.pdf

isc N-Channel MOSFET Transistor IPP60R520CPIIPP60R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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