All MOSFET. IPP60R520E6 Datasheet

 

IPP60R520E6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP60R520E6
   Marking Code: 6R520E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 8.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.4 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO220

 IPP60R520E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP60R520E6 Datasheet (PDF)

 ..1. Size:1261K  infineon
 ipp60r520e6.pdf

IPP60R520E6 IPP60R520E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principlea

 ..2. Size:1048K  infineon
 ipp60r520e6 ipa60r520e6.pdf

IPP60R520E6 IPP60R520E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principleand p

 ..3. Size:244K  inchange semiconductor
 ipp60r520e6.pdf

IPP60R520E6 IPP60R520E6

isc N-Channel MOSFET Transistor IPP60R520E6IIPP60R520E6FEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 5.1. Size:917K  infineon
 ipp60r520c6 2.0.pdf

IPP60R520E6 IPP60R520E6

MOSFET+ =L9D - PA

 5.2. Size:552K  infineon
 ipp60r520cp.pdf

IPP60R520E6 IPP60R520E6

IPP60R520CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220

 5.3. Size:245K  inchange semiconductor
 ipp60r520cp.pdf

IPP60R520E6 IPP60R520E6

isc N-Channel MOSFET Transistor IPP60R520CPIIPP60R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFM6N100 | IXFN102N30P

 

 
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