BF1109 Todos los transistores

 

BF1109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1109
   Código: NFp
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.2 W
   Voltaje máximo drenador - fuente |Vds|: 11 V
   Corriente continua de drenaje |Id|: 0.03 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
   Conductancia de drenaje-sustrato (Cd): 2.2 pF
   Resistencia entre drenaje y fuente RDS(on): 200 Ohm
   Paquete / Cubierta: SOT143

 Búsqueda de reemplazo de MOSFET BF1109

 

BF1109 Datasheet (PDF)

 ..1. Size:114K  philips
bf1109 bf1109r bf1109wr 2.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1109; BF1109R; BF1109WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 08Supersedes data of 1997 Sep 03File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 colu

 ..2. Size:347K  philips
bf1109 r wr.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORS DATA SHEETBF1109; BF1109R; BF1109WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 08Supersedes data of 1997 Sep 03NXP Semiconductors Product specificationBF1109; BF1109R;N-channel dual-gate MOS-FETsBF1109WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

 9.1. Size:439K  philips
bf1100wr.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

 9.2. Size:351K  philips
bf1105 r wr.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORS DATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 02Supersedes data of 1997 Dec 01NXP Semiconductors Product specificationBF1105; BF1105R;N-channel dual-gate MOS-FETsBF1105WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

 9.3. Size:311K  philips
bf1100 n.pdf

BF1109
BF1109

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

 9.4. Size:135K  philips
bf1101 bf1101r bf1101wr 2.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to i

 9.5. Size:100K  philips
bf1100wr 1.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 9.6. Size:60K  philips
bf1107 bf1107w 3.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1107; BF1107WN-channel single gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1998 Jun 22Philips Semiconductors Product specificationN-channel single gate MOS-FETs BF1107; BF1107WFEATURES Currentless RF switch.handbook, halfpage 3APPLICATIONS Various RF switching applications such as:12- Passive loop through

 9.7. Size:159K  philips
bf1100 bf1100r 1.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 9.8. Size:64K  philips
bf1108 bf1108r.pdf

BF1109
BF1109

BF1108; BF1108RSilicon RF switchesRev. 04 29 May 2008 Product data sheet1. Product profile1.1 General descriptionThese switches are a combination of a depletion type Field-Effect Transistor (FET) and aband-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. Thelow loss and high isolation capabilities of these devices provide excellent RF switchingfunctions.

 9.9. Size:127K  philips
bf1102 bf1102r 3.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128BF1102; BF1102RDual N-channel dual gateMOS-FETsProduct specification 2000 Apr 11Supersedes data of 1999 Jul 01Philips Semiconductors Product specificationDual N-channel dual gate MOS-FETs BF1102; BF1102RFEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a singleDESCRIPTIONpackage PINBF1102

 9.10. Size:146K  philips
bf1100wr 0.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 9.11. Size:119K  philips
bf1105 bf1105r bf1105wr 3.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification1997 Dec 02Supersedes data of 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 col

 9.12. Size:53K  philips
bf1107 2.pdf

BF1109
BF1109

BF1107N-channel single gate MOSFETRev. 04 9 January 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1107 is a depletion type field-effect transistor in a SOT23 package. The low lossand high isolation capabilities of this MOSFET provide excellent RF switching functions.Integrated diodes between gate and source and between gate and drain protect againstex

 9.13. Size:373K  philips
bf1101 r wr.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORS DATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01NXP Semiconductors Product specificationBF1101; BF1101R;N-channel dual-gate MOS-FETsBF1101WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

 9.14. Size:109K  philips
bf1100 bf1100r 01.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 9.15. Size:67K  philips
bf1108 bf1108r 3.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORSDATA SHEETBF1108; BF1108RSilicon RF switchesProduct specification 1999 Nov 18Supersedes data of 1999 Aug 19Philips Semiconductors Product specificationSilicon RF switches BF1108; BF1108RFEATURES Specially designed for low loss RF switchingup to 1 GHz.handbook, 2 columns43APPLICATIONS Various RF switching applications such as:12 Pa

 9.16. Size:370K  philips
bf1102 r.pdf

BF1109
BF1109

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageMBD128BF1102; BF1102RDual N-channel dual gate MOS-FETsProduct specification 2000 Apr 11Supersedes data of 1999 Jul 01NXP Semiconductors Product specificationDual N-channel dual gate MOS-FETs BF1102; BF1102RFEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTIONpackage PINBF1102

Otros transistores... BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , K4145 , BF1109R , BF1109WR , BF245A , BF245B , BF245C , BF327 , BF350 , BF351 .

 

 
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