IPP80CN10NG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP80CN10NG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO220

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IPP80CN10NG datasheet

 ..1. Size:1028K  infineon
 ipb79cn10ng ipd78cn10ng ipi80cn10ng ipp80cn10ng.pdf pdf_icon

IPP80CN10NG

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM) DS(on) ID 13 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 4.1. Size:705K  infineon
 ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf pdf_icon

IPP80CN10NG

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:534K  infineon
 ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf pdf_icon

IPP80CN10NG

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 4.3. Size:246K  inchange semiconductor
 ipp80cn10n.pdf pdf_icon

IPP80CN10NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP80CN10N IIPP80CN10N FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX

MOSTRAR MÁS

Otros transistores... IPP65R280C6, IPP65R280E6, IPP65R380C6, IPP65R380E6, IPP65R600C6, IPP65R600E6, IPP65R660CFD, IPP70N04S4-06, 2SK3568, IPP80N04S4-03, IPP90R1K0C3, IPP90R1K2C3, IPP90R340C3, IPP90R500C3, IPP90R800C3, IPS031N03LG, IPS040N03LG