All MOSFET. IPP80CN10NG Datasheet

 

IPP80CN10NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP80CN10NG
   Marking Code: 80CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220

 IPP80CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP80CN10NG Datasheet (PDF)

 ..1. Size:1028K  infineon
ipb79cn10ng ipd78cn10ng ipi80cn10ng ipp80cn10ng.pdf

IPP80CN10NG
IPP80CN10NG

IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM)DS(on)ID 13 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 4.1. Size:705K  infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf

IPP80CN10NG
IPP80CN10NG

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:534K  infineon
ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf

IPP80CN10NG
IPP80CN10NG

IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 4.3. Size:246K  inchange semiconductor
ipp80cn10n.pdf

IPP80CN10NG
IPP80CN10NG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP80CN10NIIPP80CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.08Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AOT7N60

 

 
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