IPP90R800C3 Todos los transistores

 

IPP90R800C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP90R800C3
   Código: 9R800C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220

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IPP90R800C3 Datasheet (PDF)

 ..1. Size:286K  infineon
ipp90r800c3.pdf

IPP90R800C3
IPP90R800C3

IPP90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Ultra low gate chargeCoolMOS 90

 ..2. Size:260K  inchange semiconductor
ipp90r800c3.pdf

IPP90R800C3
IPP90R800C3

isc N-Channel MOSFET Transistor IPP90R800C3FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.1. Size:293K  infineon
ipp90r1k2c3.pdf

IPP90R800C3
IPP90R800C3

IPP90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V

 8.2. Size:292K  infineon
ipp90r500c3.pdf

IPP90R800C3
IPP90R800C3

IPP90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 90

 8.3. Size:286K  infineon
ipp90r340c3.pdf

IPP90R800C3
IPP90R800C3

IPP90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Worldwide best R in TO220DS,on

 8.4. Size:287K  infineon
ipp90r1k0c3.pdf

IPP90R800C3
IPP90R800C3

IPP90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 90

 8.5. Size:246K  inchange semiconductor
ipp90r500c3.pdf

IPP90R800C3
IPP90R800C3

isc N-Channel MOSFET Transistor IPP90R500C3IIPP90R500C3FEATURESStatic drain-source on-resistance:RDS(on) 0.5Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a

 8.6. Size:245K  inchange semiconductor
ipp90r340c3.pdf

IPP90R800C3
IPP90R800C3

isc N-Channel MOSFET Transistor IPP90R340C3IIPP90R340C3FEATURESStatic drain-source on-resistance:RDS(on) 0.34Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... IPP65R660CFD , IPP70N04S4-06 , IPP80CN10NG , IPP80N04S4-03 , IPP90R1K0C3 , IPP90R1K2C3 , IPP90R340C3 , IPP90R500C3 , K2611 , IPS031N03LG , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IPS090N03LG , IPS105N03LG , IPS110N12N3G .

 

 
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