IPP90R800C3 Specs and Replacement

Type Designator: IPP90R800C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

IPP90R800C3 substitution

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IPP90R800C3 datasheet

 ..1. Size:286K  infineon
ipp90r800c3.pdf pdf_icon

IPP90R800C3

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 90... See More ⇒

 ..2. Size:260K  inchange semiconductor
ipp90r800c3.pdf pdf_icon

IPP90R800C3

isc N-Channel MOSFET Transistor IPP90R800C3 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

 8.1. Size:293K  infineon
ipp90r1k2c3.pdf pdf_icon

IPP90R800C3

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V... See More ⇒

 8.2. Size:292K  infineon
ipp90r500c3.pdf pdf_icon

IPP90R800C3

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90... See More ⇒

Detailed specifications: IPP65R660CFD, IPP70N04S4-06, IPP80CN10NG, IPP80N04S4-03, IPP90R1K0C3, IPP90R1K2C3, IPP90R340C3, IPP90R500C3, 18N50, IPS031N03LG, IPS040N03LG, IPS050N03LG, IPS060N03LG, IPS075N03LG, IPS090N03LG, IPS105N03LG, IPS110N12N3G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.