IPS031N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS031N03LG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 94 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 1400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Paquete / Cubierta: TO251
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IPS031N03LG Datasheet (PDF)
ipd031n03lg ips031n03lg.pdf
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ips031n03l.pdf
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ips031n03l.pdf
isc N-Channel MOSFET Transistor IPS031N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ips031g.pdf
Data Sheet No.PD 60151-JIPS031G/IPS032GSINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCHFeatures Product Summary Over temperature shutdown Over current shutdownRds(on) 70m (max) Active clamp Low current & logic level inputV clamp 50V E.S.D protectionIshutdown 12ADescriptionTon/Toff 1.5sThe IPS031G/IPS032G are fully protected single/duallow side SM
Otros transistores... IPP70N04S4-06 , IPP80CN10NG , IPP80N04S4-03 , IPP90R1K0C3 , IPP90R1K2C3 , IPP90R340C3 , IPP90R500C3 , IPP90R800C3 , 20N50 , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IPS090N03LG , IPS105N03LG , IPS110N12N3G , IPS118N10NG .
History: AM90N20-78B | FDS6679Z | FDS6299S | SM9188DSO | SP8M21FRA | IPP90R500C3 | SP8K80
History: AM90N20-78B | FDS6679Z | FDS6299S | SM9188DSO | SP8M21FRA | IPP90R500C3 | SP8K80
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