IPW50R299CP Todos los transistores

 ..1. Size:533K  infineon
 ipw50r299cp.pdf

IPW50R299CP TM C IMOSTM # A0

 ..2. Size:243K  inchange semiconductor
 ipw50r299cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R299CP IIPW50R299CP FEATURES Static drain-source on-resistance RDS(on) 299m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.1. Size:537K  infineon
 ipw50r250cp.pdf

IPW50R250CP TM C IMOSTM # A0

 7.2. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf

IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

 7.3. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

 7.4. Size:242K  inchange semiconductor
 ipw50r250cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R250CP IIPW50R250CP FEATURES Static drain-source on-resistance RDS(on) 250m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.5. Size:242K  inchange semiconductor
 ipw50r280ce.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R280CE IIPW50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So