IPW50R299CP - Даташиты. Аналоги. Основные параметры

IPW50R299CPTMCIMOSTM #:A0

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R299CPIIPW50R299CPFEATURESStatic drain-source on-resistance:RDS(on)299mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

IPW50R250CPTMCIMOSTM #:A0

IPW50R280CE, IPP50R280CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R280CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPW50R280CE, IPP50R280CETO-247 TO-2201 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R250CPIIPW50R250CPFEATURESStatic drain-source on-resistance:RDS(on)250mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R280CEIIPW50R280CEFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So