IPW50R399CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW50R399CP
Código: 5R399P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.399 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET IPW50R399CP
IPW50R399CP Datasheet (PDF)
ipw50r399cp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R399CPIIPW50R399CPFEATURESStatic drain-source on-resistance:RDS(on)399mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
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ipw50r250cp.pdf
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ipw50r199cp.pdf
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ipw50r280ce.pdf
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ipw50r190ce.pdf
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Liste
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