IPW50R399CP PDF and Equivalents Search

 ..1. Size:670K  infineon
 ipw50r399cp.pdf

IPW50R399CP TM C IMOSTM # A0... See More ⇒

 ..2. Size:243K  inchange semiconductor
 ipw50r399cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R399CP IIPW50R399CP FEATURES Static drain-source on-resistance RDS(on) 399m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 7.1. Size:534K  infineon
 ipw50r350cp.pdf

IPW50R350CP TM C IMOSTM # A0... See More ⇒

 7.2. Size:243K  inchange semiconductor
 ipw50r350cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R350CP IIPW50R350CP FEATURES Static drain-source on-resistance RDS(on) 350m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 8.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s... See More ⇒

 8.2. Size:656K  infineon
 ipw50r140cp.pdf

IPW50R140CP TM C IMOSTM # A0... See More ⇒

 8.3. Size:537K  infineon
 ipw50r250cp.pdf

IPW50R250CP TM C IMOSTM # A0... See More ⇒

 8.4. Size:647K  infineon
 ipw50r199cp.pdf

IPW50R199CP TM C IMOSTM # A0... See More ⇒

 8.5. Size:1874K  infineon
 ipw50r190ce ipp50r190ce.pdf

IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co... See More ⇒

 8.6. Size:533K  infineon
 ipw50r299cp.pdf

IPW50R299CP TM C IMOSTM # A0... See More ⇒

 8.7. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf

IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co... See More ⇒

 8.8. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction... See More ⇒

 8.9. Size:242K  inchange semiconductor
 ipw50r140cp.pdf

isc N-Channel MOSFET Transistor IPW50R140CP IIPW50R140CP FEATURES Static drain-source on-resistance RDS(on) 0.14 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

 8.10. Size:242K  inchange semiconductor
 ipw50r250cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R250CP IIPW50R250CP FEATURES Static drain-source on-resistance RDS(on) 250m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 8.11. Size:243K  inchange semiconductor
 ipw50r199cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R199CP IIPW50R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 8.12. Size:242K  inchange semiconductor
 ipw50r280ce.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R280CE IIPW50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒

 8.13. Size:243K  inchange semiconductor
 ipw50r299cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R299CP IIPW50R299CP FEATURES Static drain-source on-resistance RDS(on) 299m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 8.14. Size:242K  inchange semiconductor
 ipw50r190ce.pdf

isc N-Channel MOSFET Transistor IPW50R190CE IIPW50R190CE FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS ... See More ⇒