IPW60R075CP Todos los transistores

 ..1. Size:533K  infineon
 ipw60r075cp rev23.pdf

IPW60R075CP C IMOS&! # A0IN V . J6A>;> 9 688DG9>CC6CI PG TO247 V 2 AIG6 ADL

 ..2. Size:242K  inchange semiconductor
 ipw60r075cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R075CP IIPW60R075CP FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 0.1. Size:378K  infineon
 ipw60r075cpa.pdf

IPW60R075CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.075 DS(on),max Q 87 nC g,typ Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Aut

 6.1. Size:1855K  infineon
 ipw60r070p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPW60R070P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R070P6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

 6.2. Size:708K  infineon
 ipw60r070c6 v2.1a .pdf

MOSFET *

 6.3. Size:1384K  infineon
 ipw60r070cfd7.pdf

IPW60R070CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 6.4. Size:239K  inchange semiconductor
 ipw60r070c6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070C6 IIPW60R070C6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 6.5. Size:248K  inchange semiconductor
 ipw60r070p6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070P6 IIPW60R070P6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 6.6. Size:243K  inchange semiconductor
 ipw60r070cfd7.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R070CFD7 IIPW60R070CFD7 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain