IPW60R075CP Todos los transistores

 

IPW60R075CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW60R075CP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO247
 

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IPW60R075CP Datasheet (PDF)

 ..1. Size:533K  infineon
 ipw60r075cp rev23.pdf pdf_icon

IPW60R075CP

IPW60R075CPCIMOS&! #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 V 2 AIG6 ADL

 ..2. Size:242K  inchange semiconductor
 ipw60r075cp.pdf pdf_icon

IPW60R075CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R075CPIIPW60R075CPFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 0.1. Size:378K  infineon
 ipw60r075cpa.pdf pdf_icon

IPW60R075CP

IPW60R075CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.075DS(on),maxQ 87 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

 6.1. Size:1855K  infineon
 ipw60r070p6.pdf pdf_icon

IPW60R075CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPW60R070P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R070P6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSTRAR MÁS

Otros transistores... IPW50R250CP , IPW50R299CP , IPW50R350CP , IPW50R399CP , IPW60R041C6 , IPW60R045CP , IPW60R045CPA , IPW60R070C6 , BS170 , IPW60R075CPA , IPW60R099C6 , IPW60R099CP , IPW60R099CPA , IPW60R125C6 , IPW60R125CP , IPW60R160C6 , IPW60R165CP .

History: IRL530S | LNE08R160 | LNF10N65 | 2SK3612-01SJ

 

 
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