IPW60R165CP Todos los transistores

 ..1. Size:657K  infineon
 ipw60r165cp.pdf

IPW60R165CP C IMOS # A0 9 688DG9>CC6CI PG TO247 7!"% # 4= =;0.4,77C /0=4290/ 1 I8=>C

 ..2. Size:242K  inchange semiconductor
 ipw60r165cp.pdf

isc N-Channel MOSFET Transistor IPW60R165CP IIPW60R165CP FEATURES Static drain-source on-resistance RDS(on) 165m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 6.1. Size:1019K  infineon
 ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunct

 6.2. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 6.3. Size:1965K  infineon
 ipw60r160c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superj

 6.4. Size:2909K  infineon
 ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 6.5. Size:242K  inchange semiconductor
 ipw60r160p6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160P6 IIPW60R160P6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 6.6. Size:242K  inchange semiconductor
 ipw60r160c6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R160C6 IIPW60R160C6 FEATURES Static drain-source on-resistance RDS(on) 160m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So