IPW60R165CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW60R165CP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 192 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
Paquete / Cubierta: TO247
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IPW60R165CP Datasheet (PDF)
ipw60r165cp.pdf

IPW60R165CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8=>C
ipw60r165cp.pdf

isc N-Channel MOSFET Transistor IPW60R165CPIIPW60R165CPFEATURESStatic drain-source on-resistance:RDS(on)165mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
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Otros transistores... IPW60R075CP , IPW60R075CPA , IPW60R099C6 , IPW60R099CP , IPW60R099CPA , IPW60R125C6 , IPW60R125CP , IPW60R160C6 , 50N06 , IPW60R190C6 , IPW60R190E6 , IPW60R199CP , IPW60R250CP , IPW60R280C6 , IPW60R280E6 , IPW60R299CP , IPW65R070C6 .
History: SHD219601 | 2SK2897-01MR | AONR66821
History: SHD219601 | 2SK2897-01MR | AONR66821



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