SPA06N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA06N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO220FP
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SPA06N60C3 Datasheet (PDF)
spa06n60c3.pdf
SPA06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate charge1) 6.2 AID Periodic avalanche rated High peak current capability Ultra low effective capacitancesP-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated
spa06n60c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA06N60C3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
spa06n80c3.pdf
SPA06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci
Otros transistores... IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , SPA04N50C3 , SPA04N60C3 , SPA04N80C3 , SKD502T , SPA06N80C3 , SPA07N60C3 , SPA07N60CFD , SPA07N65C3 , SPA08N50C3 , SPA08N80C3 , SPA11N60C3 , SPA11N60CFD .
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