SPA06N60C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPA06N60C3
Marking Code: 06N60C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO220FP
SPA06N60C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA06N60C3
Datasheet (PDF)
..1. Size:222K infineon
spa06n60c3.pdf
SPA06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate charge1) 6.2 AID Periodic avalanche rated High peak current capability Ultra low effective capacitancesP-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated
..2. Size:201K inchange semiconductor
spa06n60c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA06N60C3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
8.1. Size:478K infineon
spa06n80c3.pdf
SPA06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci
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