SPA11N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA11N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 33 W
Tensión drenaje-fuente (Vds): 600 V
Corriente continua de drenaje (Id): 11 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.38 Ohm
Empaquetado / Estuche: TO220FP
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SPA11N60C3 Datasheet (PDF)
1.1. spa11n60cfd rev1.4.pdf 
Size:555K _infineon
SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for industrial grade a
1.2. spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf Size:654K _infineon
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111: Fully
3.1. spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf Size:569K _infineon
SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3
Otros transistores... SPA04N80C3 , SPA06N60C3 , SPA06N80C3 , SPA07N60C3 , SPA07N60CFD , SPA07N65C3 , SPA08N50C3 , SPA08N80C3 , IRFP4227 , SPA11N60CFD , SPA11N65C3 , SPA11N80C3 , SPA12N50C3 , SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , SPA16N50C3 .
