SPA11N60C3 Todos los transistores

 

SPA11N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPA11N60C3

Código: 11N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.9 V

Carga de compuerta (Qg): 45 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 390 pF

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: TO220FP

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SPA11N60C3 Datasheet (PDF)

1.1. spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf Size:654K _infineon

SPA11N60C3
SPA11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111: Fully

1.2. spa11n60cfd rev1.4.pdf Size:555K _infineon

SPA11N60C3
SPA11N60C3

SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for industrial grade a

 1.3. spa11n60c3e8185.pdf Size:246K _inchange_semiconductor

SPA11N60C3
SPA11N60C3

isc N-Channel MOSFET Transistor SPA11N60C3E8185,SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·A

1.4. spa11n60cfd.pdf Size:200K _inchange_semiconductor

SPA11N60C3
SPA11N60C3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA11N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

 1.5. spa11n60c3.pdf Size:201K _inchange_semiconductor

SPA11N60C3
SPA11N60C3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA11N60C3 ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

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