SPA20N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPA20N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 780 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO220FP

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SPA20N60C3 datasheet

 ..1. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf pdf_icon

SPA20N60C3

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco

 ..2. Size:201K  inchange semiconductor
 spa20n60c3.pdf pdf_icon

SPA20N60C3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N60C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 5.1. Size:466K  infineon
 spa20n60cfd.pdf pdf_icon

SPA20N60C3

SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.22 DS(on),max Intrinsic fast-recovery body diode 1) 20.7 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f

 5.2. Size:199K  inchange semiconductor
 spa20n60cfd.pdf pdf_icon

SPA20N60C3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA20N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... SPA11N65C3, SPA11N80C3, SPA12N50C3, SPA15N60C3, SPA15N60CFD, SPA15N65C3, SPA16N50C3, SPA17N80C3, IRFB3607, SPA20N60CFD, SPA20N65C3, SPA21N50C3, SPB80N06S-08, SPB02N60C3, SPB02N60S5, SPB03N60C3, SPB03N60S5