SPA20N60CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA20N60CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 780 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: TO220FP
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SPA20N60CFD Datasheet (PDF)
spa20n60cfd.pdf

SPA20N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.22 DS(on),max Intrinsic fast-recovery body diode1)20.7 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f
spa20n60cfd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA20N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
spa20n60c3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... SPA11N80C3 , SPA12N50C3 , SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , IRLZ44N , SPA20N65C3 , SPA21N50C3 , SPB80N06S-08 , SPB02N60C3 , SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 .
History: 2SJ337 | INJ0002AU1 | AP4511GM | CEB09N7G | AM3443P | IRFS7434PBF | AP4503GM-HF
History: 2SJ337 | INJ0002AU1 | AP4511GM | CEB09N7G | AM3443P | IRFS7434PBF | AP4503GM-HF



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