SPA20N60CFD. Аналоги и основные параметры

Наименование производителя: SPA20N60CFD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 780 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm

Тип корпуса: TO220FP

Аналог (замена) для SPA20N60CFD

- подборⓘ MOSFET транзистора по параметрам

 

SPA20N60CFD даташит

 ..1. Size:466K  infineon
 spa20n60cfd.pdf pdf_icon

SPA20N60CFD

SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.22 DS(on),max Intrinsic fast-recovery body diode 1) 20.7 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f

 ..2. Size:199K  inchange semiconductor
 spa20n60cfd.pdf pdf_icon

SPA20N60CFD

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA20N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 5.1. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf pdf_icon

SPA20N60CFD

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco

 5.2. Size:201K  inchange semiconductor
 spa20n60c3.pdf pdf_icon

SPA20N60CFD

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N60C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

ПОКАЗАТЬ ЕЩЁ

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