SPA20N65C3 Todos los transistores

 ..1. Size:611K  infineon
 spp20n65c3 spa20n65c3 spi20n65c3.pdf

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconducta

 ..2. Size:200K  inchange semiconductor
 spa20n65c3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N65C3 FEATURES With TO-220F packaging New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

 7.1. Size:466K  infineon
 spa20n60cfd.pdf

SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.22 DS(on),max Intrinsic fast-recovery body diode 1) 20.7 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f

 7.2. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco

 7.3. Size:201K  inchange semiconductor
 spa20n60c3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N60C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 7.4. Size:199K  inchange semiconductor
 spa20n60cfd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA20N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING