SPA20N65C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA20N65C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 780 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220FP
- Selección de transistores por parámetros
SPA20N65C3 Datasheet (PDF)
spp20n65c3 spa20n65c3 spi20n65c3.pdf

SPP20N65C3, SPA20N65C3SPI20N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transconducta
spa20n65c3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N65C3FEATURESWith TO-220F packagingNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
spa20n60cfd.pdf

SPA20N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.22 DS(on),max Intrinsic fast-recovery body diode1)20.7 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 3SK108R | FDN338 | IXFF80N50Q2 | 2SK3107C | AP4N3R6H | AFN8816 | S10H12S
History: 3SK108R | FDN338 | IXFF80N50Q2 | 2SK3107C | AP4N3R6H | AFN8816 | S10H12S



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