All MOSFET. SPA20N65C3 Datasheet

 

SPA20N65C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA20N65C3
   Marking Code: 20N65C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 34.5 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 20.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 87 nC
   Rise Time (tr): 5 nS
   Drain-Source Capacitance (Cd): 780 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
   Package: TO220FP

 SPA20N65C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA20N65C3 Datasheet (PDF)

 ..1. Size:611K  infineon
 spp20n65c3 spa20n65c3 spi20n65c3.pdf

SPA20N65C3 SPA20N65C3

SPP20N65C3, SPA20N65C3SPI20N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transconducta

 ..2. Size:200K  inchange semiconductor
 spa20n65c3.pdf

SPA20N65C3 SPA20N65C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N65C3FEATURESWith TO-220F packagingNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

 7.1. Size:466K  infineon
 spa20n60cfd.pdf

SPA20N65C3 SPA20N65C3

SPA20N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.22 DS(on),max Intrinsic fast-recovery body diode1)20.7 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified f

 7.2. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf

SPA20N65C3 SPA20N65C3

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

 7.3. Size:201K  inchange semiconductor
 spa20n60c3.pdf

SPA20N65C3 SPA20N65C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 7.4. Size:199K  inchange semiconductor
 spa20n60cfd.pdf

SPA20N65C3 SPA20N65C3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA20N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , MMF60R360QTH , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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