SPB02N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPB02N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de SPB02N60C3 MOSFET
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SPB02N60C3 datasheet
spb02n60c3.pdf
Isc N-Channel MOSFET Transistor SPB02N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
spb02n60s5.pdf
SPB02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB02N60S5 PG-TO263 Q67040-S4212 02N60S5 Maximum Ratings Parame
spb02n60s5.pdf
Isc N-Channel MOSFET Transistor SPB02N60S5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
Otros transistores... SPA15N65C3, SPA16N50C3, SPA17N80C3, SPA20N60C3, SPA20N60CFD, SPA20N65C3, SPA21N50C3, SPB80N06S-08, AON7506, SPB02N60S5, SPB03N60C3, SPB03N60S5, SPB04N50C3, SPB04N60C3, SPB04N60S5, SPB07N60C3, SPB07N60S5
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