SPB02N60C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPB02N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Drain Current |Id|: 1.8 A
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: D2PAK_TO263
SPB02N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPB02N60C3 PDF doc:
1.1. spb02n60c3_rev.2.4.pdf 
Size:545K _infineon
VDS Tjmax ? • • G • • • G
2.1. spb02n60s5_rev.2.4.pdf Size:343K _infineon
SPB02N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 3 ? • New revolutionary high voltage technology ID 1.8 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB02N60S5 PG-TO263 Q67040-S4212 02N60S5 Maximum Ratings Parameter Symbol Value Un
Datasheet: SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , SPA21N50C3 , SPB80N06S-08 , J112 , SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 , SPB07N60S5 .
