SPB07N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB07N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO263

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SPB07N60C3 datasheet

 ..1. Size:1389K  infineon
 spb07n60c3.pdf pdf_icon

SPB07N60C3

SPB07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3 Maximum Ratings P

 ..2. Size:258K  inchange semiconductor
 spb07n60c3.pdf pdf_icon

SPB07N60C3

Isc N-Channel MOSFET Transistor SPB07N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 5.1. Size:158K  infineon
 spa07n60c2 spp07n60c2 spb07n60c2.pdf pdf_icon

SPB07N60C3

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS Power Transistor Feature Product Summary New revolutionary high voltage technology VDS @ Tjmax 650 V Ultra low gate charge RDS(on) 0.6 Periodic avalanche rated ID 7.3 A Extreme dv/dt rated Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

 6.1. Size:646K  infineon
 spb07n60s5.pdf pdf_icon

SPB07N60C3

SPB07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 07N60S5 SPB07N60S5 PG-TO263 Q67040-S4185 Maximum Ratings Par

MOSTRAR MÁS

Otros transistores... SPB80N06S-08, SPB02N60C3, SPB02N60S5, SPB03N60C3, SPB03N60S5, SPB04N50C3, SPB04N60C3, SPB04N60S5, IRFP250, SPB07N60S5, SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3