SPB11N60C3 Todos los transistores

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SPB11N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB11N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 600 V

Corriente continua de drenaje (Id): 11 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: D2PAK_TO263

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SPB11N60C3 Datasheet (PDF)

1.1. spb11n60c3 rev26.pdf Size:469K _infineon

SPB11N60C3
SPB11N60C3

SPB11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings Parameter Symbol Val

2.1. spb11n60s5 rev.2.3.pdf Size:686K _infineon

SPB11N60C3
SPB11N60C3

SPB11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 11N60S5 SPB11N60S5 PG-TO263 Q67040-S4199 Maximum Ratings Parameter Symbol Value

Otros transistores... SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 , SPB07N60S5 , SPB08P06PG , SPB100N03S2-03G , SPB10N10LG , IRF460 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 .

 


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Introduzca al menos 1 números o letras