SPB11N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPB11N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO263

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SPB11N60C3 datasheet

 ..1. Size:469K  infineon
 spb11n60c3.pdf pdf_icon

SPB11N60C3

SPB11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings P

 ..2. Size:258K  inchange semiconductor
 spb11n60c3.pdf pdf_icon

SPB11N60C3

Isc N-Channel MOSFET Transistor SPB11N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 6.1. Size:686K  infineon
 spb11n60s5.pdf pdf_icon

SPB11N60C3

SPB11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 11N60S5 SPB11N60S5 PG-TO263 Q67040-S4199 Maximum Ratings Par

 6.2. Size:258K  inchange semiconductor
 spb11n60s5.pdf pdf_icon

SPB11N60C3

Isc N-Channel MOSFET Transistor SPB11N60S5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

MOSTRAR MÁS

Otros transistores... SPB04N50C3, SPB04N60C3, SPB04N60S5, SPB07N60C3, SPB07N60S5, SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, RFP50N06, SPB11N60S5, SPB12N50C3, SPB16N50C3, SPB17N80C3, SPB18P06PG, SPB20N60C3, SPB20N60S5, SPB21N50C3