SPB20N60S5 Todos los transistores

 

SPB20N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPB20N60S5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 1170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de SPB20N60S5 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPB20N60S5 Datasheet (PDF)

 ..1. Size:665K  infineon
 spb20n60s5.pdf pdf_icon

SPB20N60S5

SPB20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB20N60S5 PG-TO263 Q67040-S4171 20N60S5Maximum RatingsPara

 ..2. Size:204K  inchange semiconductor
 spb20n60s5.pdf pdf_icon

SPB20N60S5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPB20N60S5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

 6.1. Size:782K  infineon
 spb20n60c3.pdf pdf_icon

SPB20N60S5

VDS Tjmax G 3 G

 6.2. Size:258K  inchange semiconductor
 spb20n60c3.pdf pdf_icon

SPB20N60S5

Isc N-Channel MOSFET Transistor SPB20N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

MOSTRAR MÁS

Otros transistores... SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , STF13NM60N , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 .

History: DH100P35F | SPB21N50C3 | WNM2016-3 | 2N4416ACSM | FS50UM-3 | SPB20N60C3 | IRF5N5210

 

 
Back to Top

 


 
.