SPB20N60S5 Specs and Replacement
Type Designator: SPB20N60S5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 1170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO263
SPB20N60S5 substitution
- MOSFET ⓘ Cross-Reference Search
SPB20N60S5 datasheet
spb20n60s5.pdf
SPB20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB20N60S5 PG-TO263 Q67040-S4171 20N60S5 Maximum Ratings Para... See More ⇒
spb20n60s5.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPB20N60S5 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM... See More ⇒
spb20n60c3.pdf
Isc N-Channel MOSFET Transistor SPB20N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
Detailed specifications: SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3, SPB17N80C3, SPB18P06PG, SPB20N60C3, STF13NM60N, SPB21N50C3, SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3, SPD02N60C3, SPD02N60S5, SPD02N80C3
Keywords - SPB20N60S5 MOSFET specs
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