All MOSFET. SPB20N60S5 Datasheet

 

SPB20N60S5 Datasheet and Replacement


   Type Designator: SPB20N60S5
   Marking Code: 20N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 79 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO263
 

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SPB20N60S5 Datasheet (PDF)

 ..1. Size:665K  infineon
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SPB20N60S5

SPB20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB20N60S5 PG-TO263 Q67040-S4171 20N60S5Maximum RatingsPara

 ..2. Size:204K  inchange semiconductor
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SPB20N60S5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPB20N60S5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

 6.1. Size:782K  infineon
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SPB20N60S5

VDS Tjmax G 3 G

 6.2. Size:258K  inchange semiconductor
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SPB20N60S5

Isc N-Channel MOSFET Transistor SPB20N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

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Keywords - SPB20N60S5 MOSFET datasheet

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