SPD02N50C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPD02N50C3
   Código: 02N50C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET SPD02N50C3

SPD02N50C3 Datasheet (PDF)

..1. Size:630K infineon
spd02n50c3.pdf

VDS Tjmax G 2 G

..2. Size:241K inchange semiconductor
spd02n50c3.pdf

isc N-Channel MOSFET Transistor SPD02N50C3, ISPD02N50C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 V

8.1. Size:82K siemens
spd02n60.pdf

SPD02N60SPU02N60Preliminary dataSIPMOS Power Transistor N-Channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) @ VGS Package Ordering CodeSPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous d

8.2. Size:434K infineon
spd02n80c3.pdf

SPD02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7WDS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low ga

8.3. Size:603K infineon
spd02n60c3 spu02n60c3.pdf

VDS Tjmax G G G G

8.4. Size:709K infineon
spu02n60s5 spd02n60s5.pdf

SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2

8.5. Size:882K infineon
spd02n60s5 spu02n60s5.pdf

8.6. Size:241K inchange semiconductor
spd02n60s5.pdf

isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.7. Size:243K inchange semiconductor
spd02n80c3.pdf

isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3FEATURESStatic drain-source on-resistance:RDS(on)2.7Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

8.8. Size:242K inchange semiconductor
spd02n60c3.pdf

isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIR800DP | 2SK560 | SWP540

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