SPD02N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPD02N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO252

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SPD02N60C3 Datasheet (PDF)

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spd02n60c3 spu02n60c3.pdf

VDS Tjmax G G G G

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spd02n60c3.pdf

isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

6.1. Size:82K siemens
spd02n60.pdf

SPD02N60SPU02N60Preliminary dataSIPMOS Power Transistor N-Channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) @ VGS Package Ordering CodeSPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous d

6.2. Size:709K infineon
spu02n60s5 spd02n60s5.pdf

SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2

6.3. Size:882K infineon
spd02n60s5 spu02n60s5.pdf

6.4. Size:241K inchange semiconductor
spd02n60s5.pdf

isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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