All MOSFET. SPD02N60C3 Datasheet

 

SPD02N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD02N60C3
   Marking Code: 02N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252

 SPD02N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD02N60C3 Datasheet (PDF)

 ..1. Size:603K  infineon
 spd02n60c3 spu02n60c3.pdf

SPD02N60C3 SPD02N60C3

VDS Tjmax G G G G

 ..2. Size:242K  inchange semiconductor
 spd02n60c3.pdf

SPD02N60C3 SPD02N60C3

isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 6.1. Size:82K  siemens
 spd02n60.pdf

SPD02N60C3 SPD02N60C3

SPD02N60SPU02N60Preliminary dataSIPMOS Power Transistor N-Channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) @ VGS Package Ordering CodeSPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous d

 6.2. Size:709K  infineon
 spu02n60s5 spd02n60s5.pdf

SPD02N60C3 SPD02N60C3

SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2

 6.3. Size:882K  infineon
 spd02n60s5 spu02n60s5.pdf

SPD02N60C3 SPD02N60C3

SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2

 6.4. Size:241K  inchange semiconductor
 spd02n60s5.pdf

SPD02N60C3 SPD02N60C3

isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VN66AD | SE2N7002K

 

 
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