SPD02N80C3 Todos los transistores

 ..1. Size:434K  infineon
 spd02n80c3.pdf

SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 W DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low ga

 ..2. Size:243K  inchange semiconductor
 spd02n80c3.pdf

isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3 FEATURES Static drain-source on-resistance RDS(on) 2.7 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

 8.1. Size:82K  siemens
 spd02n60.pdf

SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor N-Channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code SPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous d

 8.2. Size:630K  infineon
 spd02n50c3.pdf

VDS Tjmax G 2 G

 8.3. Size:603K  infineon
 spd02n60c3 spu02n60c3.pdf

VDS Tjmax G G G G

 8.4. Size:709K  infineon
 spu02n60s5 spd02n60s5.pdf

SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2

 8.5. Size:882K  infineon
 spd02n60s5 spu02n60s5.pdf

SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2

 8.6. Size:241K  inchange semiconductor
 spd02n60s5.pdf

isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low effective capacitance Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.7. Size:241K  inchange semiconductor
 spd02n50c3.pdf

isc N-Channel MOSFET Transistor SPD02N50C3, ISPD02N50C3 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V

 8.8. Size:242K  inchange semiconductor
 spd02n60c3.pdf

isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low effective capacitance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage