SPD02N80C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD02N80C3
Marking Code: 02N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO252
SPD02N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD02N80C3 Datasheet (PDF)
spd02n80c3.pdf
SPD02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7WDS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low ga
spd02n80c3.pdf
isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3FEATURESStatic drain-source on-resistance:RDS(on)2.7Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8
spd02n60.pdf
SPD02N60SPU02N60Preliminary dataSIPMOS Power Transistor N-Channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) @ VGS Package Ordering CodeSPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous d
spu02n60s5 spd02n60s5.pdf
SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2
spd02n60s5 spu02n60s5.pdf
SPU02N60S5SPD02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking02N60S5SPU02N60S5 PG-TO2
spd02n60s5.pdf
isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
spd02n50c3.pdf
isc N-Channel MOSFET Transistor SPD02N50C3, ISPD02N50C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 V
spd02n60c3.pdf
isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
