SPD03N60C3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SPD03N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPD03N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO252

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SPD03N60C3 datasheet

..1. Size:635K infineon
spd03n60c3 spu03n60c3.pdf pdf_icon

VDS Tjmax 650 V jmax Feature 1.4 DS(on) New revolutionary high voltage technology .2 A D Ultra low gate charge PG TO251 PG TO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering C de Marking SPD0 N60C PG TO252 Q67040 S4421 0 N60C SPU0 N60C PG TO251 0 N60C Maximum Rat

..2. Size:243K inchange semiconductor
spd03n60c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

6.1. Size:892K infineon
spd03n60s5 spu03n60s5.pdf pdf_icon

SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 1.4 New revolutionary high voltage technology ID 3.2 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 Ultra low effective capacitances 3 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 03N60S5 SPU03N60S5 PG-T

6.2. Size:244K inchange semiconductor
spd03n60s5.pdf pdf_icon

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

Otros transistores... SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3, SPD02N60C3, SPD02N60S5, SPD02N80C3, SPD03N50C3, 7N60, SPD03N60S5, SPD04N50C3, SPD04N60C3, SPD04N60S5, SPD04N80C3, SPD04P10PG, SPD04P10PLG, SPD06N60C3

SPD03N60C3 Todos los transistores