All MOSFET. SPD03N60C3 Datasheet

 

SPD03N60C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD03N60C3

Marking Code: 03N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 3.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO252

SPD03N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD03N60C3 Datasheet (PDF)

0.1. spd03n60c3 spu03n60c3.pdf Size:635K _infineon

SPD03N60C3
SPD03N60C3

VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum Rat

0.2. spd03n60c3.pdf Size:243K _inchange_semiconductor

SPD03N60C3
SPD03N60C3

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 6.1. spd03n60s5 spu03n60s5.pdf Size:892K _infineon

SPD03N60C3
SPD03N60C3

SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-T

6.2. spd03n60s5.pdf Size:244K _inchange_semiconductor

SPD03N60C3
SPD03N60C3

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

Datasheet: SPB80N10LG , SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , BUK455-200A , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 .

 

 
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