SPD04N80C3 Todos los transistores

 ..1. Size:389K  infineon
 spd04n80c3.pdf

SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 W DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) PG-TO252-3

 ..2. Size:245K  inchange semiconductor
 spd04n80c3.pdf

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 FEATURES Static drain-source on-resistance RDS(on) 1.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

 8.1. Size:268K  1
 spd04n60s5 spu04n60s5.pdf

SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-T

 8.2. Size:744K  infineon
 spd04n60c3 spu04n60c3.pdf

VDS Tjmax G G G G

 8.3. Size:733K  infineon
 spd04n50c3.pdf

VDS Tjmax G ; available in Halogen free mold compounda) G

 8.4. Size:244K  inchange semiconductor
 spd04n60s5.pdf

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 8.5. Size:244K  inchange semiconductor
 spd04n50c3.pdf

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 560

 8.6. Size:245K  inchange semiconductor
 spd04n60c3.pdf

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE