All MOSFET. SPD04N80C3 Datasheet

 

SPD04N80C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD04N80C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 4 A

Total Gate Charge (Qg): 20 nC

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: DPAK, TO252

SPD04N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04N80C3 Datasheet (PDF)

0.1. spd04n80c3.pdf Size:491K _infineon

SPD04N80C3
SPD04N80C3

SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 1.3 Ω DS(on)max • Extreme dv/dt rated Q 23 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO252-3 • Ultra low gate charge • Ultra low effe

0.2. spd04n80c3.pdf Size:245K _inchange_semiconductor

SPD04N80C3
SPD04N80C3

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

 8.1. spd04n50c3.pdf Size:769K _infineon

SPD04N80C3
SPD04N80C3

 VDS Tjmax Ω • • G • • • • G

8.2. spd04n60c3 spu04n60c3.pdf Size:744K _infineon

SPD04N80C3
SPD04N80C3

 VDS Tjmax Ω • • G G • • • • G G

 8.3. spd04n50c3.pdf Size:244K _inchange_semiconductor

SPD04N80C3
SPD04N80C3

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 560

8.4. spd04n60s5.pdf Size:244K _inchange_semiconductor

SPD04N80C3
SPD04N80C3

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 8.5. spd04n60c3.pdf Size:245K _inchange_semiconductor

SPD04N80C3
SPD04N80C3

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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