SPD07N20G Todos los transistores

 ..1. Size:244K  inchange semiconductor
 spd07n20g.pdf

isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 6.1. Size:136K  infineon
 spd07n20.pdf

SPD 07N20 Preliminary Data SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V VDS N channel Drain-Source on-state resistance 0.4 RDS(on) Enhancement mode Continuous drain current 7 A ID Avalanche rated dv/dt rated Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD07N20 P-TO252 Q67040-S4120 Tape and Reel SPU07N20 P-

 6.2. Size:1067K  infineon
 spd07n20 .pdf

SPD 07N20 G SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V DS N channel Drain-Source on-state resistance 0.4 W DS(on) Enhancement mode Continuous drain current 7 A D Avalanche rated d /d rated Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-TO251 Yes Tube Maximum Ratings, at

 8.1. Size:975K  infineon
 spd07n60c3 spu07n60c3.pdf

VDS Tjmax G G

 8.2. Size:888K  infineon
 spd07n60s5 spu07n60s5.pdf

SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated 2 3 Extreme dv/dt rated 3 1 2 1 Ultra low effective capacitances Improved transconductance Type Packag

 8.3. Size:244K  inchange semiconductor
 spd07n60s5.pdf

isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 8.4. Size:245K  inchange semiconductor
 spd07n60c3.pdf

isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U