SPD07N20G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPD07N20G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO252

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SPD07N20G Datasheet (PDF)

..1. Size:244K inchange semiconductor
spd07n20g.pdf

isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20GFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

6.1. Size:136K infineon
spd07n20.pdf

SPD 07N20Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD07N20 P-TO252 Q67040-S4120 Tape and ReelSPU07N20 P-

6.2. Size:1067K infineon
spd07n20 .pdf

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VDS N channelDrain-Source on-state resistance 0.4WDS(on) Enhancement modeContinuous drain current 7 AD Avalanche rated d /d ratedPin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-TO251 Yes TubeMaximum Ratings, at

8.1. Size:975K infineon
spd07n60c3 spu07n60c3.pdf

VDS Tjmax G G

8.2. Size:888K infineon
spd07n60s5 spu07n60s5.pdf

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag

8.3. Size:244K inchange semiconductor
spd07n60s5.pdf

isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

8.4. Size:245K inchange semiconductor
spd07n60c3.pdf

isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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