SPD07N20G
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD07N20G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO252
SPD07N20G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD07N20G
Datasheet (PDF)
..1. Size:244K inchange semiconductor
spd07n20g.pdf 
isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20GFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
6.1. Size:136K infineon
spd07n20.pdf
SPD 07N20Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD07N20 P-TO252 Q67040-S4120 Tape and ReelSPU07N20 P-
6.2. Size:1067K infineon
spd07n20 .pdf
SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VDS N channelDrain-Source on-state resistance 0.4WDS(on) Enhancement modeContinuous drain current 7 AD Avalanche rated d /d ratedPin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-TO251 Yes TubeMaximum Ratings, at
8.2. Size:888K infineon
spd07n60s5 spu07n60s5.pdf
SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag
8.3. Size:244K inchange semiconductor
spd07n60s5.pdf
isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
8.4. Size:245K inchange semiconductor
spd07n60c3.pdf
isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
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