SPD07N20G Datasheet and Replacement
Type Designator: SPD07N20G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 21 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO252
SPD07N20G substitution
SPD07N20G Datasheet (PDF)
spd07n20g.pdf

isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20GFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
spd07n20.pdf

SPD 07N20Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD07N20 P-TO252 Q67040-S4120 Tape and ReelSPU07N20 P-
spd07n20 .pdf

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VDS N channelDrain-Source on-state resistance 0.4WDS(on) Enhancement modeContinuous drain current 7 AD Avalanche rated d /d ratedPin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-TO251 Yes TubeMaximum Ratings, at
Datasheet: SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , MMD60R360PRH , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG , SPD18P06PG .
History: SPD04P10PLG
Keywords - SPD07N20G MOSFET datasheet
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History: SPD04P10PLG



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