All MOSFET. SPD07N20G Datasheet

 

SPD07N20G MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD07N20G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 7 A

Total Gate Charge (Qg): 21 nC

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: DPAK, TO252

SPD07N20G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD07N20G Datasheet (PDF)

0.1. spd07n20g.pdf Size:244K _inchange_semiconductor

SPD07N20G
SPD07N20G

isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

6.1. spd07n20 .pdf Size:1067K _infineon

SPD07N20G
SPD07N20G

SPD 07N20 G SIPMOSÒ Power Transistor Product Summary Features Drain source voltage 200 V DS · N channel Drain-Source on-state resistance 0.4 W DS(on) · Enhancement mode Continuous drain current 7 A D · Avalanche rated · d /d rated Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-TO251 Yes Tube Maximum Ratings, at

6.2. spd07n20.pdf Size:136K _infineon

SPD07N20G
SPD07N20G

SPD 07N20 Preliminary Data SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V VDS • N channel Drain-Source on-state resistance 0.4 RDS(on) Ω • Enhancement mode Continuous drain current 7 A ID • Avalanche rated • dv/dt rated Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD07N20 P-TO252 Q67040-S4120 Tape and Reel SPU07N20 P-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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