SPI07N60S5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPI07N60S5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO262

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SPI07N60S5 datasheet

 ..1. Size:528K  infineon
 spp07n60s5 spi07n60s5.pdf pdf_icon

SPI07N60S5

SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Or

 6.1. Size:702K  infineon
 spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPI07N60S5

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P

 6.2. Size:620K  infineon
 spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf pdf_icon

SPI07N60S5

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P

 7.1. Size:390K  infineon
 spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf pdf_icon

SPI07N60S5

SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor V 650 V DS Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO

MOSTRAR MÁS

Otros transistores... SPD30N03S2L-10G, SPD30N03S2L-20G, SPD30P06PG, SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG, SPI80N06S-08, SPI07N60C3, IRF640, SPI07N65C3, SPI08N50C3, SPI08N80C3, SPI11N60C3, SPI11N60CFD, SPI11N60S5, SPI11N65C3, SPI12N50C3