SPI07N60S5 Datasheet and Replacement

SPP07N60S5SPI07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Or

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

SPP07N65C3, SPI07N65C3SPA07N65C3CoolMOS Power TransistorV 650 VDSFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 PG-TO

SPA07N65C3 330 = 3:)5 !5%26-6735V 650 VDSFeatureRDS(on) 0.6 + ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=NID 7. A 2 BIG7 BEL =7I; 9>7G=;PGTO220 PGTO220PGTO262 1 -;G?E:?9 7K7B7D9>; G7I;:2 "MIG;C; :v/dt rated3 % ?=> F;7A 9JGG;DI 97F78?B?IN2 211P-TO220-3-31 &CFGEK;: IG7DH9ED:J9I7D9;PTO220