All MOSFET. SPI07N60S5 Datasheet

 

SPI07N60S5 Datasheet and Replacement


   Type Designator: SPI07N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO262
 

 SPI07N60S5 substitution

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SPI07N60S5 Datasheet (PDF)

 ..1. Size:528K  infineon
 spp07n60s5 spi07n60s5.pdf pdf_icon

SPI07N60S5

SPP07N60S5SPI07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Or

 6.1. Size:702K  infineon
 spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPI07N60S5

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 6.2. Size:620K  infineon
 spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf pdf_icon

SPI07N60S5

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 7.1. Size:390K  infineon
 spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf pdf_icon

SPI07N60S5

SPP07N65C3, SPI07N65C3SPA07N65C3CoolMOS Power TransistorV 650 VDSFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 PG-TO

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Datasheet: SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 , IRF640 , SPI07N65C3 , SPI08N50C3 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 , SPI12N50C3 .

History: NCE0224 | FQP9N08L

Keywords - SPI07N60S5 MOSFET datasheet

 SPI07N60S5 cross reference
 SPI07N60S5 equivalent finder
 SPI07N60S5 lookup
 SPI07N60S5 substitution
 SPI07N60S5 replacement

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