SPP03N60C3 Todos los transistores

 

SPP03N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP03N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de SPP03N60C3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPP03N60C3 Datasheet (PDF)

 ..1. Size:593K  infineon
spp03n60c3 spa03n60c3 spp03n60c3 spa03n60c3 .pdf pdf_icon

SPP03N60C3

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

 ..2. Size:247K  inchange semiconductor
spp03n60c3.pdf pdf_icon

SPP03N60C3

isc N-Channel MOSFET Transistor SPP03N60C3ISPP03N60C3FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low current capabilityImproved transconductanceABSOLUTE MA

 6.1. Size:356K  infineon
spp03n60s5.pdf pdf_icon

SPP03N60C3

SPP03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking03N60S5SPP03N60S5 PG-TO220 Q67040-S4

 6.2. Size:247K  inchange semiconductor
spp03n60s5.pdf pdf_icon

SPP03N60C3

isc N-Channel MOSFET Transistor SPP03N60S5ISPP03N60S5FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE

Otros transistores... SPI16N50C3 , SPI20N60C3 , SPI20N60CFD , SPI20N65C3 , SPI21N50C3 , SPP02N60C3 , SPP02N60S5 , SPP02N80C3 , IRFP260 , SPP03N60S5 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , SPP06N60C3 , SPP06N80C3 , SPP07N60C3 .

History: PB5A2BA | NTMFS4823NT1G | VBA5102M | AOW15S60 | MIC94050YM4TR | RJL6012DPP | STY130NF20D

 

 
Back to Top

 


 
.