SPP03N60C3. Аналоги и основные параметры

Наименование производителя: SPP03N60C3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP03N60C3

- подборⓘ MOSFET транзистора по параметрам

 

SPP03N60C3 даташит

 ..1. Size:593K  infineon
 spp03n60c3 spa03n60c3 spp03n60c3 spa03n60c3 .pdf pdf_icon

SPP03N60C3

VDS Tjmax G FP G 3 2 1 P-TO220-3-31 G ;-3-111

 ..2. Size:247K  inchange semiconductor
 spp03n60c3.pdf pdf_icon

SPP03N60C3

isc N-Channel MOSFET Transistor SPP03N60C3 ISPP03N60C3 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low current capability Improved transconductance ABSOLUTE MA

 6.1. Size:356K  infineon
 spp03n60s5.pdf pdf_icon

SPP03N60C3

SPP03N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 1.4 New revolutionary high voltage technology ID 3.2 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 03N60S5 SPP03N60S5 PG-TO220 Q67040-S4

 6.2. Size:247K  inchange semiconductor
 spp03n60s5.pdf pdf_icon

SPP03N60C3

isc N-Channel MOSFET Transistor SPP03N60S5 ISPP03N60S5 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUTE

ПОКАЗАТЬ ЕЩЁ

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