SPP04N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPP04N60S5
   Código: 04N60S5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 17.6 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SPP04N60S5

SPP04N60S5 Datasheet (PDF)

..1. Size:365K infineon
spp04n60s5.pdf

SPP04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking04N60S5SPP04N60S5 PG-TO220 Q67040-S

..2. Size:247K inchange semiconductor
spp04n60s5.pdf

isc N-Channel MOSFET Transistor SPP04N60S5ISPP04N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

6.1. Size:304K infineon
spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO

6.2. Size:588K infineon
spp04n60c3 spa04n60c3.pdf

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

6.3. Size:248K inchange semiconductor
spp04n60c3.pdf

isc N-Channel MOSFET Transistor SPP04N60C3ISPP04N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

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