SPP04N60S5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP04N60S5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de SPP04N60S5 MOSFET
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SPP04N60S5 datasheet
spp04n60s5.pdf
SPP04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 04N60S5 SPP04N60S5 PG-TO220 Q67040-S
spp04n60s5.pdf
isc N-Channel MOSFET Transistor SPP04N60S5 ISPP04N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUT
spp04n60c3 spb04n60c3 spa04n60c3.pdf
SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO
Otros transistores... SPI21N50C3, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, IRF4905, SPP04N80C3, SPP06N60C3, SPP06N80C3, SPP07N60C3, SPP07N60CFD, SPP07N60S5, SPP07N65C3, SPP08N50C3
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