Справочник MOSFET. SPP04N60S5

 

SPP04N60S5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPP04N60S5
   Маркировка: 04N60S5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.6 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SPP04N60S5

 

 

SPP04N60S5 Datasheet (PDF)

 ..1. Size:365K  infineon
 spp04n60s5.pdf

SPP04N60S5 SPP04N60S5

SPP04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking04N60S5SPP04N60S5 PG-TO220 Q67040-S

 ..2. Size:247K  inchange semiconductor
 spp04n60s5.pdf

SPP04N60S5 SPP04N60S5

isc N-Channel MOSFET Transistor SPP04N60S5ISPP04N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

 6.1. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60S5 SPP04N60S5

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO

 6.2. Size:588K  infineon
 spp04n60c3 spa04n60c3.pdf

SPP04N60S5 SPP04N60S5

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

 6.3. Size:248K  inchange semiconductor
 spp04n60c3.pdf

SPP04N60S5 SPP04N60S5

isc N-Channel MOSFET Transistor SPP04N60C3ISPP04N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.95Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

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