SPP06N80C3 Todos los transistores

 

SPP06N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP06N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO220
 

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SPP06N80C3 Datasheet (PDF)

 ..1. Size:445K  infineon
 spp06n80c3.pdf pdf_icon

SPP06N80C3

SPP06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 ..2. Size:247K  inchange semiconductor
 spp06n80c3.pdf pdf_icon

SPP06N80C3

isc N-Channel MOSFET Transistor SPP06N80C3ISPP06N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.9Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABSO

 8.1. Size:222K  infineon
 spp06n60c3.pdf pdf_icon

SPP06N80C3

SPP06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO220-3-1 Extreme dv /dt rated Improved transconductanceType Package Ordering Co

 8.2. Size:247K  inchange semiconductor
 spp06n60c3.pdf pdf_icon

SPP06N80C3

isc N-Channel MOSFET Transistor SPP06N60C3ISPP06N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.75Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

MOSTRAR MÁS

Otros transistores... SPP02N80C3 , SPP03N60C3 , SPP03N60S5 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , SPP06N60C3 , SPP20N60C3 , SPP07N60C3 , SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH , SPP11N60C3 .

 

 
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