SPP06N80C3 Specs and Replacement

Type Designator: SPP06N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220

SPP06N80C3 substitution

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SPP06N80C3 datasheet

 ..1. Size:445K  infineon
 spp06n80c3.pdf pdf_icon

SPP06N80C3

SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe... See More ⇒

 ..2. Size:247K  inchange semiconductor
 spp06n80c3.pdf pdf_icon

SPP06N80C3

isc N-Channel MOSFET Transistor SPP06N80C3 ISPP06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO... See More ⇒

 8.1. Size:222K  infineon
 spp06n60c3.pdf pdf_icon

SPP06N80C3

SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Co... See More ⇒

 8.2. Size:247K  inchange semiconductor
 spp06n60c3.pdf pdf_icon

SPP06N80C3

isc N-Channel MOSFET Transistor SPP06N60C3 ISPP06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

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Detailed specifications: SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5, SPP04N80C3, SPP06N60C3, K3569, SPP07N60C3, SPP07N60CFD, SPP07N60S5, SPP07N65C3, SPP08N50C3, SPP08N80C3, SPP08P06PH, SPP11N60C3

Keywords - SPP06N80C3 MOSFET specs

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