SPP07N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP07N60C3
Código: 07N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 VQgⓘ - Carga de la puerta: 21 nC
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SPP07N60C3
SPP07N60C3 Datasheet (PDF)
spp07n60c3 spi07n60c3 spa07n60c3.pdf
SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf
SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60c3.pdf
isc N-Channel MOSFET Transistor SPP07N60C3ISPP07N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA
spp07n60cfd.pdf
SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:
spa07n60c2 spp07n60c2 spb07n60c2.pdf
SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi
spp07n60cfd.pdf
isc N-Channel MOSFET Transistor SPP07N60CFDISPP07N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.7Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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